File:TyTunnelling.png
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| Description |
English: Schematic representation of an electron (e, right) tunnelling through a barrier of "height" (vertical dimension is energy) e*V_b and thickness (horizontal dimension is spatial) d_b. e is the elementary charge, -1.6E-19 Coulomb, V is the bias voltage leading to a current flowing between the right and the left "electrode" (side of the barrier). |
| Date | Göteborg 1999 |
| Source | Created by Torsten Henning and published in Charging effects in niobium nanostructures, PhD thesis, Mikroelektronik och Nanovetenskap, Chalmers Tekniska Högskola AB och Göteborgs Universitet, Göteborg 1999. Full text available online [1] as www.arxiv.org e-print cond-mat/9901308. |
| Author | Torsten Henning |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 21:04, 12 October 2005 | | 915 × 650 (23 KB) | wikimediacommons>DrTorstenHenning | {{English}} Schematic representation of an electron (e, right) tunnelling through a barrier of "height" (vertical dimension is energy) e*V_b and thickness (horizontal dimension is spatial) d_b. e is the elementary charge, -1.6E-19 Coulomb, V is the b |
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